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An n-channel depletion-type Si UHF MOS power FET has been developed which exhibits 16.4-W output power, 6.1-dB power gain, and 35-percent drain efficiency at 700 MHz. The island-like n+source, interdigitated 5-µm-long and 20-mm-wide gate, and n+drain were fabricated in p on p+epitaxial wafer.
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Morita et al. (1974) studied this question.
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