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Electron counting rules are developed to describe the bonding at interfaces between covalent networks and ionic oxides. These rules are used to describe the bonding at various idealised interfaces of Si(100) with various high dielectric constant ( k ) gate oxides such as HfO 2 , ZrO 2 , SrTiO 3 and LaAlO 3 . (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Robertson et al. (2004) studied this question.
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