A physically-based model of the effective mobility in heavily-doped n-MOSFETs

We present a new analytical mobility model for channel electrons in heavily-doped MOSFETs biased from weak to strong inversion suitable for implementation in device simulation codes. The model accounts for the two-dimensionality of the electron gas and for the effect of charge trapping on the measurements and has been validated by comparing the theoretical curves with an extensive set of mobility measurements performed on devices with channel doping ranging from 3.8/spl times/10/sup 17/ to 1.25/spl times/10/sup 18/ cm/sup -3/ over a wide bias and temperature range (141-400 K).