Self-consistent 2-D model for quantum effects in n-MOS transistors

We present a self-consistent two-dimensional (2-D) model for carrier quantization effects in the channel of highly-doped n-MOSFET's. Quantization is taken into account inside a box region surrounding the inversion channel. The proposed approach extends previously proposed one-dimensional (1-D) schemes allowing one to estimate the quantum mechanical (QM) effects on the device current. Good convergence properties are achieved exploiting the effective intrinsic density concept. The simulator has been applied to MOS devices with different peak channel doping, resulting in an improved description of the device behavior.