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The electrical properties of thin thermal SiO2 films were studied as a function of high-temperature, postoxidation annealing in various ambients. Surface charge measurements were made of SiO2–Si structures after annealing for different time intervals in a N2 ambient at temperatures ?925°C. The oxidation-induced fixed oxide charge rapidly decreased. A more gradually increasing charge was observed that is primarily attributed to fast surface states.
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Revitz et al. (1979) studied this question.
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