Conditions to remove contaminations adsorbed on a surface in wet cleaning processes have to be perfectly controlled. Megasonic excitation of ozonized water removes hydrocarbon contamination from silicon surfaces. When ozonized water was excited by megasonics at a frequency of about 1 MHz, OH radicals were produced in the cleaning solution. As a result, we have shown that hydrocarbons on the wafer surface were oxidized by OH radicals leading to hydrocarbon‐free Si surfaces.
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Ojima et al. (1997) studied this question.
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