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Spectroscopic analysis demonstrates enhanced cathodoluminescence efficiency in rare-earth-doped tin dioxide within porous silicon, indicating excitation transfer between dopant ions.
Tin dioxide doped with antimony (SnO 2 :Sb) and sol–gel doped with terbium (Tb 3+ ) were deposited on porous silicon (PS) layers and on monocrystalline Si wafers. Energy dispersive X‐ray (EDX) analysis and Auger electron spectroscopy (AES) show the presence of tin, oxygen and terbium in the PS matrix. Preliminary measurements on cathodoluminescent emission are presented. The mechanism of rare‐earth emission is discussed through a comparative study of the cathodoluminescence (CL) of SnO 2 :Sb:Tb 3+ /PS and SnO 2 :Sb:Tb 3+ /Si. A strongly enhanced CL efficiency of SnO 2 :Sb sol–gel doped with Tb 3+ and Eu 3+ ions deposited in PS is reported. The enhancement is attributed to a process of excitation transfer between rare‐earth ions. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Moadhen et al. (2005) studied this question.
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