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High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators, Endoh, Akira, Yamashita, Yoshimi, Hirose, Nobumitsu, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura, Takashi
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Endoh et al. (2006) studied this question.
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