High-power and high-temperature operation of an InGaN laser over 3 W at 85 °C using a novel double-heat-flow packaging technology

In this paper, we present a novel double-heat-flow (DHF) packaging technology of an indium gallium nitride (InGaN) laser diode (LD) promising for high-power and high-temperature operation. The LD chip on a submount is covered by another III–nitride ceramic submount, which reduces the thermal resistance, facilitating the assembly in a commercial compact package. A DHF LD operates with a maximum output power of over 3 W at 85 °C as well as that of 1.9 W even at 140 °C.