The method to measure the source resistance of the GaAs MESFET proposed here is able to determine its value directly without correcting for the channel resistance of the GaAs MESFET. A low gate current measurement condition is employed which leads to accurate determination of Rsand Rdover a relatively wide range of drain currents.
No takes yet. Share an insight, caveat, or question.
Yang et al. (1986) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: