Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 14, 1982Electronics Letters

Low field mobility, effective saturation velocity and performance of submicron GaAs MESFETs

View Full Paper
Ask AI
Bookmark
Share

Authors

M. S. ShurM. S. ShurUniversity Graduate Center

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

M. S. Shur (1982) studied this question.

synapsesocial.com/papers/6a83b8403fd01c19a6c57953https://doi.org/10.1049/el:19820619
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures1981 · 74 citations
  2. 2Current saturation and small-signal characteristics of GaAs field-effect transistors1973 · 94 citations
  3. 3Fan out and speed of GaAs SDFL logic1982 · 8 citations
  4. 4I—V characteristics of GaAs MESFET with nonuniform doping profile1980 · 25 citations
  5. 5Analytical model of GaAs MESFET's1978 · 71 citations