A model for visible photon emission from reverse-biased silicon p-n junctions

We report visible (380–650 nm) electroluminescence from reverse-biased silicon p-n junctions and from n- and p-type field-effect transistors designed for a standard chip-fabrication process. We measured the spectra of over 40 junctions and devices and found that they differed from previously reported silicon electroluminescence spectra. We use a hot carrier recombination model and account for Fabry-Perot effects to explain the observed electroluminescence spectrum. Our model’s prediction is in good agreement with the measured spectra.