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We show that the low catastrophic optical damage power density observed for AlGaInP laser diodes (LDs) (1/2 to 1/2.9 that of AlGaAs LDs) is mainly attributable to the high thermal resistivities of the materials (5.5 times higher than for AlGaAs LDs) by using a thermal runaway model calculation.
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Fujii et al. (1993) studied this question.
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