Al /n- InP (100) structures, prepared as Schottky contacts, are provided by Al thermal evaporation at 28 °C and subsequent annealing in the range of 200–750 °C for 3 min. Annealing at temperatures above 500 °C causes the formation of metallic indium at the interfaces. The orientation relationship between In and the substrate is revealed by x-ray diffraction texture analysis. For samples annealed below the melting point of Al (660.1 °C), an epitaxy is formed with In(101)∥InP(111)A and In[010]∥InP[1̄10]. For samples annealed at temperatures above the melting point of Al, the same epitaxy occurs besides two further epitaxies of indium growing on InP(111)B planes. Their orientation relationships are In(001)∥InP(111)B and In[010]∥InP[1̄10] and, for the second type, In(110)∥InP(111)B and In[1̄13]∥InP[1̄10].
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Kečkéš et al. (1998) studied this question.
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