A high performance double metal structure, Pt/Al/n-InP diode is discussed. The diode exhibits an effective barrier height of 0.74 eV, forward characteristics with an ideality factor n=1.11 over five decades, and a reverse leakage current of 1.34×10−4 A/cm2 at −3 V. A detailed study of the electrical characteristics and secondary ion mass spectroscopy analysis of the sample suggest that the high barrier height is due to formation of an interfacial layer at the contact interface. The diode exhibits good thermal stability, maintaining a barrier height of 0.70 eV after annealing at 300 °C for 10 h.
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Huang et al. (1995) studied this question.
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