July 13, 1987Applied Physics Letters

GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm

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SWS. Y. Wang SLSteven H. LinCalifornia Institute of Technology YHY.M. HoungHewlett-Packard (United States)

Abstract

We report a 1.3-μm GaAs traveling-wave electro-optic waveguide modulator with a 3-dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high-speed InP/GaInAs photodiode. The modulator has a coplanar strip electrode configuration with a double heterojunction Al0.032Ga0.968As/GaAs/Al0.032Ga0.968As optical guide grown by low-pressure organometallic vapor phase epitaxy.

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Wang et al. (1987) studied this question.

synapsesocial.com/papers/6a8872c2f6c5aff6584fd756 https://doi.org/10.1063/1.98982

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GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm

Abstract

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GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm

Abstract

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