Submicron patterned doping of GaAs using a thin solid Si dopant source by transient excimer laser melting

Patterned doping of GaAs using a thin solid Si dopant source by pulsed excimer laser melting is described. Linewidths as narrow as 0.3 μm are demonstrated. The power-dependent linewidth of the doped region agrees well with calculations of transient heat conduction in the substrate.