Fermi-level pinning on ideally terminated InP(110) surfaces

This is the authors' abstract. We don't add key points for this paper.

The deposition of one monolayer of Sb followed by annealing of about 300 ^∘{}C gives nearly the flat-band condition for both n- and p-type InP(110). Schottky barriers were formed on these surfaces by using nonreactive metals, Au and Ag, and the surface-Fermi-level positions measured by photoemission spectroscopy converge at about 0.52 eV above the valence-band maximum (VBM) for both n- and p-type InP. A defect model using a donor level due to phosphorus deficiency at 0.55 eV (±{}0.05 eV) above the VBM is proposed as a most probable candidate responsible for this Schottky-barrier formation. However, it is also noted that the Sb interlayer could shift the metal-induced gap state's pinning position.