We present a soft x-ray photoemission study of the in situ grown Ti/InP(110) and Sn/InP(110) interfaces. We find that the Ti overlayer deposited onto the cleaved InP(110) surface readily reacts even at submonolayer coverages. A Ti–In alloy (In dispersed in the Ti overlayer) of changing composition and two Ti–P phases are formed. While In outdiffuses at room temperature (RT) through more than 40 Å of Ti, the P-containing reaction phases are more confined to the interface. In contrast, the Sn overlayers do not react with the InP(110) surface and the overlayer is growing in the Stranski–Krastanow fashion with at least one uniform Sn layer. Independent of large differences in reactivity, the surface Fermi level pinning energies are for both interfaces studied similar (0.3 eV for Ti and 0.4 eV for Sn). This indicates, in agreement with our previous studies of InP interfaces, that the RT pinning level is insensitive to the microscopic chemistry and calls for a simple (in the first approximation) mechanism of the Schottky barrier formation.
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Kendelewicz et al. (1987) studied this question.
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