Amorphous-silicon thin film transistors (TFTs) with submicrometer-long bottom-gate have been fabricated and their characteristics were evaluated. By the desirable effects of highly conductive source and drain of excimer-laser crystallized Si film, the mobility was hardly decreased from about 1.0 cm/sup 2//Vs for the 15-/spl mu/m long TFT to about 0.9 cm/sup 2//Vs for the 0.5-/spl mu/m long TFT. Detailed effects of the gate electrode thickness and length have been discussed on the TFT characteristics.
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Kim et al. (1996) studied this question.
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