Hot ion-implantation has been applied to threshold voltage control of amorphous-silicon thin-film transistors. A threshold voltage shift as large as 13 V has been achieved without deterioration of the field-effect mobility. The technique was also used to form distributed-threshold voltage transistors which have a microstructure inside the channel. It was verified that the off-characteristics were greatly improved.>
No takes yet. Share an insight, caveat, or question.
Satoh et al. (1992) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: