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August 1, 1980IEEE Transactions on Electron Devices

Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor

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SOS. OguraHindustan Aeronautics Limited (India)PTP.J. TsangIBM (United States)WWWilliam W. WalkerConcord Consortium

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Ogura et al. (1980) studied this question.

synapsesocial.com/papers/6a6f83eff44fa9f079dcf807https://doi.org/10.1109/t-ed.1980.20040
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