The transport model in semiconductors is examined in the case where the effect of distributed gap states is significant like, e.g., in thin-film transistors. A solution scheme is derived for the two additional continuity equations accounting for the trapped charge such that, without loss of generality, the efficiency of the traditional method implemented in the existing device-analysis codes is kept. The dynamic effect of the trapped charge is then examined in the ac operation of a realistic thin-film device, including the analysis of the interelectrode capacitances.
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Pellegrini et al. (1996) studied this question.
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