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The decomposition kinetics of amorphous hydrogenated silicon films have been studied by thermomanometric analysis at constant heating rate. rf and dc-biased rf glow-discharge films, as well as films deposited by reactive sputtering, have been analyzed and the results used to determine the thermodynamic parameters characterizing the activation barriers for decomposition of the =SiH2 and ≡SiH centers. Conclusions regarding the structure of these films are presented on the basis of kinetic evidence and parallel infrared absorption studies.
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McMillan et al. (1979) studied this question.
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