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Conductance fluctuations in hydrogenated amorphous silicon ( a-Si:H) are simulated using a dynamical model of resistor diffusion on a lattice held at the percolation threshold. A fraction of lattice sites is designated as a trap, such that when a resistor diffuses onto that site it remains localized for a finite period of time. When a distribution of traps based on the defect density of a-Si:H is employed, the conductance fluctuations of the resistor network exhibit $1/f$ noise interspersed with random telegraph switching noise, as observed in experimental measurements of a-Si:H.
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Lust et al. (1995) studied this question.
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