Tunnel current through 1.27-8.12-nm-thick gate oxides has been calculated on the basis of multiple-scattering theory, in which the SiO 2 layer is segmented into multiple rectangular potential barriers. By using the conduction band barrier height of 3.34 eV determined for the SiO 2 /Si(100) interfaces, a tunneling effective mass of 0.35 m 0 is obtained so as to reproduce the SiO 2 thickness dependence on the direct tunnel current. The Fowler-Nordheim tunnel current oscillation due to interference between the propagating electron wave at the SiO 2 conduction band and the wave reflected at the SiO 2 /Si interface has also been explained by employing an oxide conduction band effective mass of 0.60 m 0 . It is found that the oxide thicknesses determined by ellipsometry are in good agreement with those extracted by fitting the measured tunnel current to theoretical one.
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Fukuda et al. (1998) studied this question.
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