Physical and electrical properties of laser-annealed ion-implanted silicon

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1A laser-scanning apparatus for annealing of ion-implantation damage in semiconductors1978 · 124 citations
2. 2Contact metallurgy for shallow junction Si devices1976 · 39 citations
3. 3Use of argon laser radiation in restoration of single-crystal state of ion-implantation-amorphized silicon surface1975 · 18 citations
4. 4Evaluation of a cesium primary ion source on an ion microprobe mass spectrometer1977 · 82 citations
5. 5Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry1977 · 46 citations