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February 1, 1978Applied Physics Letters

A laser-scanning apparatus for annealing of ion-implantation damage in semiconductors

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AGA. GatLawrence Berkeley National LaboratoryJGJ. F. GibbonsUniversity College Dublin

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Gat et al. (1978) studied this question.

synapsesocial.com/papers/6a84339fda9d2319e77bf837https://doi.org/10.1063/1.89960
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  1. 1Use of argon laser radiation in restoration of single-crystal state of ion-implantation-amorphized silicon surface1975 · 18 citations