InSb(100) reconstructions probed with core-level photoemission

The InSb(100) surface was grown using the techniques of molecular-beam expitaxy. The surface was found to undergo several surface reconstructions, including a c(4×{}4), a c(8×{}2), an asymmetric (1×{}3), a symmetric (1×{}3), and a (1×{}1). High-resolution photoemission spectra of the In and Sb 4d core levels clearly exhibited surface-shifted components for some of these reconstructed surfaces. Analyses of the In and Sb core-level photoemission intensities as well as of the surface to bulk intensity ratios for the c(4×{}4) and c(8×{}2) structures were carried out. The c(4×{}4) surface was found to be terminated with 1--(3/4 monolayers of Sb, while (3/4 monolayer of In was found to be the termination of the c(8×{}2) surface. Structural models are proposed for the c(8×{}2) and c(4×{}4) based upon these coverages and upon existing models of the similar GaAs(100) structures.