Pt emitters were deposited using electron-beam-induced reaction on overetched Si emitters fabricated by a conventional dry etching process. An emission current of 10 µA was obtained from a 100-tip field emitter array (FEA) at an extraction voltage of 100 V. A prototype of a nanometer-sized field emitter was fabricated using focused ion beam (FIB) etching and electron-beam-induced deposition (EBID).
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Morimoto et al. (1996) studied this question.
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