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June 1, 1987IEEE Electron Device Letters

Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography

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Authors

MMM. MiyakeFukushima Medical UniversityTKTakashi KobayashiTokyo Institute of TechnologyKDK. DeguchiNagoya University

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Miyake et al. (1987) studied this question.

synapsesocial.com/papers/6a84502cfc282ee53183d425https://doi.org/10.1109/edl.1987.26625
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