Flexible InGaZnO thin film transistors using stacked Y₂O₃/TiO₂/Y₂O₃gate dielectrics grown at room temperature

In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin‐film transistor (TFT) using room‐temperature processed Y 2 O 3 /TiO 2 /Y 2 O 3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub‐threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm 2 /V s, and a large I on / I off ratio of 1.7 × 10 6 . The low operation voltage, small sub‐threshold swing and high mobility could be ascribed to the combination of high‐ κ TiO 2 and large band gap Y 2 O 3 , which provide the potential to meet the requirements of low‐temperature and low‐power portable electronics. magnified image (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)