The stability of InGaAsP/InP DH lasers has been investigated in water and mirror facet oxidation has been confirmed by Auger sputtering analysis. The pulse threshold current increasing rate for InGaAsP/InP lasers is about two orders of magnitude smaller than that for AlGaAs/GaAs lasers under both storage and pulsc operation tests in water. The facet degradation has not been enhanced by light output power, but rather is enhanced by the active layer temperature rise due to carrier injection.
No takes yet. Share an insight, caveat, or question.
Fukuda et al. (1980) studied this question.