An explanation of the degradation of the frequency response of GaAs MESFETs with drain bias based on the basis of monotonic decrease in saturation velocity at large electric field strength is presented. Device simulations made using the two-dimensional electron temperature model show the current cutoff frequency decreasing with an increase of drain-source voltage in a manner similar to that observed for laboratory devices.>
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W.R. Curtice (1988) studied this question.
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