State-of-the-art RF power levels of 1.2 mW and > 1 mW in a second-harmonic mode at 280 and 315 GHz, respectively, have been obtained in InP Gunn devices on diamond heatsinks with graded doping profile. Devices with the anode close to the heatsink showed higher oscillation frequencies and better overall performance.
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H. Eisele (1998) studied this question.
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