Ensemble Monte Carlo simulation of an AlGaAs/GaAs heterostructure MIS-like FET

An ensemble Monte Carlo simulation of a heterostructure MIS-like FET is presented in which the quasi-two-dimensionality of electron gas in the heterostructure is taken into account by the lowest three subbands. An AlGaAs/GaAs heterostructure MIS-like FET with a 1- mu m-long gate has been investigated. The electron transport is discussed, as well as the dependence of device performance on the gate length and on the thickness of the AlGaAs semi-insulating layers. The electronic potential in the channel of the FET is substantially affected by the equipotential of the gate metal, showing a nonuniform high electric field present in the submicrometer channel. The electronic transport in the FET reflects this nonuniform high electric field, resulting in nonstationary and hot-electron transport in the submicrometer channel.>