A closed-formed analytical PMOS delayed-turn-off model suitable for simulation of circuits with buried-channel PMOS devices operating in the delayed-turn-off region at liquid-nitrogen temperature is presented. As verified by low-temperature PISCES results, the closed-form analytical PMOS delayed-turn-off model provides a much better accuracy for simulation of circuits operating at 77 K.>
No takes yet. Share an insight, caveat, or question.
Sim et al. (1992) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: