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The temperature dependence of single-event burnout (SEB) in n-channel power MOSFETs is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends.>
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Johnson et al. (1992) studied this question.
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