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The potential of arc lamp annealing techniques in GaAs device processing is demonstrated by the fabrication of Be-implanted mesa pin diodes. Implants were done at 50 and 120 keV with doses of 4.4×1014 and 5.1×1014 cm−2, respectively (total dose =9.5×1014 cm−2) into a 14-μm-thick undoped (ND−NA≊7.5×1014 cm−3) GaAs epitaxial layer grown by vapor phase epitaxy. Ten-second annealing cycles with peak temperatures of 950° and 1050 °C have been studied. The electrical characteristics of these diodes are superior to published furnace-annealed, Be-implanted GaAs diodes.
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Tabatabaie‐Alavi et al. (1983) studied this question.
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