Results are reported on the current of holes injected into thermally grown SiO2 from a planar avalanching p-n junction. The current seems to be limited by a bulk process, viz., field-assisted thermal emission from traps in the SiO2 (Poole-Frenkel conduction). This mechanism accounts for the exponential dependence of the current on the field in the oxide. From the decay of the current as a function of time, a value of 6 ± 2 cm−1 was found for N0S, the concentration of hole-trapping centers in the SiO2 times the capture cross section.
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J.F. Verwey (1972) studied this question.
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