Answers are grounded in this paper and cite their sources.
Taking account of the bulk charge and a finite substrate-source e.m.f., expressions are derived for the substrate and gate transconductances of a metal-oxide-semiconductor (m.o.s.) transistor. Comparison with experimental results indicates some discrepancies, but these appear to be no greater than would be expected of a first-order theory. A brief discussion of the factors affecting the substrate transconductance is given.
No takes yet. Share an insight, caveat, or question.
R.S.C. Cobbold (1966) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: