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November 1, 1978IEEE Transactions on Electron Devices

Mo gate tetrode

D.M. Brown R.J. Connery

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Abstract

The n-channel high-frequency dual-gate MOSFET's or tetrodes made using Mo gate (RMOS) self-aligned processing are described. This includes design and processing considerations, manufacturing yield, and high-frequency performance. Each of the two gates are protected with p-n diode structures which exhibit silicon-controlled rectifier action, UHF data on devices built on epitaxial wafers show high-gain narrow-bandwidth characteristics.

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Cite This Study

Brown et al. (1978) studied this question.

synapsesocial.com/papers/6a8521e6ca39fc72e8c2a31b https://doi.org/10.1109/t-ed.1978.19270

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