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Results are presented of an investigation to determine whether minority carrier lifetime within ion-implanted layers can be restored to preirradiation levels by annealing. Reverse-recovery measurements were conducted on diffused diodes damaged on the low-doped side by light doses of carbon. The results show that practically complete recovery can be obtained, but annealing beyond the 400°C range associated with light-dose lattice reordering to as high as 600–650°C is required.
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Davies et al. (1970) studied this question.
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