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Strained layer InGaAs/GaAs quantum wells have been grown by molecular-beam epitaxy on patterned (100) GaAs substrates. Indium migration away from the facets of patterned mesas is shown to be strongly dependent upon the arsenic flux during growth. Based upon this effect we have grown structures in which the number of active quantum wells in adjacent areas of a segmented contact device can be varied.
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Pratt et al. (1994) studied this question.
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