The operating principle of our polarization mode splitter is based on the polarization-dependent refractive index changes induced by disordering InGaAs/InP superlattices. We disordered superlattices by the Si/sub 3/N/sub 4/ cap-annealing method and measured the near-field patterns to confirm that the device functioned properly at a wavelength of 1.52 /spl mu/m. The crosstalk was about -10 dB. We should be able to improve the characteristics of this device by optimizing its structure. This device requires no electrical control and will be very suitable for semiconductor monolithic integrated circuits.>
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Suzuki et al. (1994) studied this question.
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