Si and Ge (111) surface structures after pulsed laser annealing

Pulsed laser irradiation of (111) oriented single-crystal surfaces of Si and Ge is shown to result in the production of (1×1) surface structures as determined by low-energy electron diffraction. These metastable surface structures are obtained in the absence of any stabilizing impurities. The temperature range over which these surface structures are stable has also been determined. These results are compared with those obtained by conventional sputter-anneal treatments.