cw infrared laser annealing of ion-implanted silicon

Solid phase epitaxial regrowth of ion-implanted Si was obtained with cw infrared radiation of CO2 (10.6 μm) and Nd : YAG lasers. Arsenic-implanted samples were analyzed by optical and electron transmission microscopy and by Rutherford backscattering with channeling. Dislocation-free monocrystalline structures were obtained on substrates which were preheated to 200–400 °C and then scanned with a laser beam of ∼25 W. There was no redistribution of the implanted As and the sample surface was free of any features which might indicate melting. A channeling angular scan showed that the As atoms were located exactly on the lattice sites. However, the relatively high values of sheet resistance suggest the presence of residual point defects.