The kinetics of intrinsic and dopant-enhanced solid-phase epitaxy (SPE) is studied in buried amorphous Si layers in which SPE is not retarded by H. As, P, B, and Al profiles were formed by multiple energy ion implantation over a concentration range of (1--30)×10¹⁹∕cm³. Samples were annealed in air at temperatures in the range 460--6600.2em0ex^∘C and the rate of interface motion was monitored using time-resolved reflectivity. The dopant-enhanced SPE rates were modeled with the generalized Fermi level shifting model using degenerate semiconductor statistics. The effect of band bending between the crystalline and amorphous sides of the interface is also considered.
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Johnson et al. (2007) studied this question.
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