The relaxation of supersaturated arsenic concentrations resulting from Nd:YAG laser annealing of implanted silicon was investigated, using a thermal post-treatment with a stationary 40-W CO2−laser beam. It was found that the relaxation time constant is ∼12 min at 700 °C and ∼20 min at 600 °C.
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Tsien et al. (1981) studied this question.
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