The thermoelectric properties of heavily doped hot-pressed germanium-silicon alloys

The electrical resistivity and Seebeck coefficient have been measured on a series of hot-pressed Ge-Si alloys over the temperature range 300-1200 °K and Hall mobility in the range 300-1000 °K. The results indicate that some specimens possess mobilities and Seebeck coefficients close to single-crystal values. Making use of available thermal resistivity data the maximum efficiency of a single couple generating device constructed from the best p-type and n-type alloys was computed to be 8% when operating between 300-1000 °K.